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| Ordering number : EN5874 NPN Epitaxial Planar Silicon Composite Transistor FH102 High-Frequency Low-Noise Amp, Differential Amp Applications Features Package Dimensions * Composite type with 2 transistors contained in the MCP unit: mm package currently in use, improving the mounting 2149-MCP6 efficiency greatly. * The FH102 is formed with two chips, being equivalent to the 2SC5226, placed in one package. * Optimal for differential amplification due to excellent 6 thermal equilibrium and pair capability. 1 0.65 2.0 [FH102] 5 4 0 `0.1 1.25 2.1 0.2 0.25 0.425 0.15 2 3 0.425 Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC PT Tj Tstg Conditions Ratings 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Base1 SANYO : MCP6 0.2 0.9 Mounted on ceramic board (250mm2x0.8mm), 1unit Mounted on ceramic board (250mm2x0.8mm) 20 10 2 70 300 500 150 -55 to +150 Unit V V V mA mW mW C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Base-to-Emitter Voltage Difference Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Symbol ICBO IEBO hFE hFE(small/large) VBE(small-large) fT Cob Cre Conditions VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=20mA VCE=5V, IC=20mA VCE=5V, IC=20mA VCE=5V, IC=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz Ratings min typ max 1.0 10 200 Unit A A 90 0.7 0.95 1.0 7 0.75 0.5 mV GHz pF pF 5 1.2 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51598TS (KOTO) TA-1130 No.5874-1/5 FH102 Continued from preceding page. Parameter Forward Transfer Gain Noise Figure Symbol S2le2(1) S2le2(2) NF Conditions VCE=5V, IC=20mA, f=1GHz VCE=5V, IC=3mA, f=1GHz VCE=5V, IC=7mA, f=1GHz Ratings min 9 typ 12 8 1.0 max Unit dB dB dB 1.8 Note) The specifications shown above are for each individual transistor except the hFE (small/large) and VBE (small-large) for which pair capability is also shown. Marking : 102 Electrical Connection B1 B2 E2 C1 E1 C2 3 2 hFE - I C VCE=5V 2 fT - IC VCE=5V Gain-Bandwidth Product,fT - GHz 2 2 2 10 7 5 3 2 DC Current Gain, hFE 10 0 7 5 3 2 10 7 5 3 5 7 1.0 3 5 7 10 3 5 7 100 1.0 7 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 Collector Current,IC - mA 3 2 Collector Current,IC - mA f=1MHz 3 C ob - VCB Reverse Transfer Capacitance, Cre - pF Cre - VCB f=1MHz 2 Output Capacitance, Cob - pF 1.0 7 5 3 2 1.0 7 5 3 2 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB - V Collector-to-Base Voltage, VCB - V No.5874-2/5 FH102 12 NF - I C Forward Transfer Gain, S21e - dB VCE=5V f=1GHz 14 12 S21e 2 - IC f=1GHz 10 Noise Figure, NF - dB 2 CE = 6 6 4 2 0 4 2 0 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 V 8 CE =2 V 8 V 5V 10 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 Collector Current,IC - mA 600 Collector Current,IC - mA P D - Ta Allowable Power Dissipation, PD - mW 500 400 To tal 300 di ss ip 1u 200 ati nit on 100 0 0 Mounted on ceramic board (250mm2x0.8mm) 20 40 60 80 100 120 140 160 Ambient Temperature, Ta - C No.5874-3/5 FH102 S Parameters f=100MHz, 200 to 2000MHz (200MHz step) j50 j25 j100 j150 j10 j200 j250 150 f=100MHz, 200 to 2000MHz (200MHz step) 0.1GHz 120 90 VCE =5V IC =20mA 60 VCE =5V IC =7mA 0.1GHz VCE =2V IC =3mA 0.1GHz 30 2.0GHz 2.0GHz 2.0GHz 0 10 25 50 100 150 250 500 VCE =2V IC =3mA -j10 VCE =5V IC =20mA 180 2.0GHz 4 8 12 16 20 0 VCE =5V IC =7mA 0.1GHz -j250 0.1GHz -j200 -150 -j150 -30 0.1GHz -j25 -j50 -j100 -120 -90 -60 f=100MHz, 200 to 2000MHz (200MHz step) 90 120 f=100MHz, 200 to 2000MHz (200MHz step) 2.0GHz 60 j50 j25 j100 j150 30 j10 j200 j250 VCE =5V IC =20mA 150 2.0GHz 2.0GHz VCE =2V IC =3mA VCE =5V IC =7mA 180 0.1GHz 0.04 0.08 0.12 0.16 0.2 0 0 10 25 50 100 150 250 500 2.0GHz -j10 -150 -30 VCE =5V IC =20mA 0.1GHz -j250 -j200 VCE =5V IC =7mA 2.0GHz -j25 VCE =2V IC =3mA -j100 -j150 -120 -90 -60 -j50 2.0GHz No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. No.5874-4/5 FH102 S Parameters (Common emitter) VCE=5V, IC=7mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.720 0.612 0.497 0.456 0.440 0.436 0.434 0.433 0.433 0.434 0.439 S11 - 46.0 - 80.9 - 121.3 - 143.5 - 157.6 - 167.5 - 176.1 176.6 170.9 165.0 159.6 S21 17.973 13.927 8.656 6.080 4.725 3.864 3.258 2.847 2.329 2.252 2.057 S21 148.5 127.3 105.0 92.8 84.3 77.0 70.3 64.5 57.4 54.2 49.2 S12 0.030 0.047 0.066 0.079 0.094 0.110 0.126 0.143 0.160 0.178 0.197 S12 68.5 57.1 51.3 52.9 55.4 56.8 57.9 58.4 58.9 58.6 58.1 S22 0.880 0.697 0.479 0.382 0.339 0.323 0.312 0.304 0.296 0.293 0.294 S22 - 23.6 - 37.6 - 47.6 - 50.5 - 51.8 - 53.4 - 55.8 - 58.3 - 62.0 - 65.0 - 68.1 VCE=5V, IC=20mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.481 0.420 0.391 0.386 0.381 0.382 0.385 0.388 0.390 0.391 0.394 S11 - 78.8 - 119.2 - 151.6 - 166.4 - 175.9 178.2 172.1 166.7 162.1 156.7 152.1 S21 29.795 19.008 10.416 7.084 5.407 4.401 3.701 3.217 2.839 2.534 2.319 S21 132.9 112.2 95.4 86.6 80.1 74.1 68.5 63.6 58.8 54.3 50.1 S12 0.022 0.033 0.052 0.071 0.092 0.114 0.134 0.156 0.176 0.197 0.219 S12 63.9 60.8 64.7 67.2 68.4 67.8 66.8 65.6 64.0 62.4 60.6 S22 0.707 0.470 0.296 0.236 0.213 0.208 0.204 0.202 0.199 0.197 0.197 S22 - 38.2 - 51.1 - 55.3 - 56.1 - 56.6 - 57.9 - 60.7 - 63.5 - 67.9 - 71.2 - 74.2 VCE=2V, IC=3mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.858 0.782 0.653 0.588 0.557 0.543 0.536 0.533 0.527 0.525 0.528 S11 - 32.4 - 60.7 - 101.1 - 126.5 - 143.7 - 156.3 - 166.8 - 175.5 177.0 170.3 163.8 S21 9.413 8.187 5.855 4.337 3.444 2.871 2.446 2.145 1.904 1.714 1.564 S21 157.2 138.5 113.8 98.4 87.7 78.5 70.5 63.5 57.1 51.7 45.9 S12 0.040 0.070 0.101 0.114 0.122 0.130 0.137 0.146 0.155 0.168 0.183 S12 72.6 59.2 44.5 39.1 38.0 38.6 40.3 42.5 45.0 47.3 49.2 S22 0.945 0.833 0.637 0.515 0.454 0.426 0.407 0.393 0.382 0.379 0.378 S22 - 16.5 - 29.3 - 43.2 - 50.0 - 53.8 - 57.1 - 60.3 - 63.8 - 68.0 - 72.0 - 75.8 No.5874-5/5 |
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